Room-Temperature mobility above 2200 cm2/Vs of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure
نویسندگان
چکیده
منابع مشابه
Effects of hydrostatic pressure and temperature on the AlGaN/GaN High electron mobility transistors
In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...
متن کاملDopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors.
We report the rational synthesis of dopant-free GaN/AlN/AlGaN radial nanowire heterostructures and their implementation as high electron mobility transistors (HEMTs). The radial nanowire heterostructures were prepared by sequential shell growth immediately following nanowire elongation using metal-organic chemical vapor deposition (MOCVD). Transmission electron microscopy (TEM) studies reveal t...
متن کاملSurface Morphology and Electronic Properties of Dislocations in AlGaN/GaN Heterostructures
110 The AlGaN/GaN heterstrostructures with its intrinsic two-dimensional electron gas (2DEG) is a promising materials system for high speed, high power, and high temperature electronics. Recently, it has been shown that the electron mobility (μ) of the 2DEG can exceed 50,000 cm2/Vs at low temperatures.1,2 Based on what is known about the 2DEG system in AlGaAs/GaAs heterostructures, growth morph...
متن کامل13.1 Influence of MOCVD Growth Conditions on the Two-dimensional Electron Gas in AlGaN/GaN Heterostructures
The influence of MOCVD growth conditions (carrier gas, growth temperature, and V/III ratio) on the AlGaN barrier and the corresponding 2DEG for AlGaN/GaN heterostructures grown on 150 mm silicon is investigated. Hall mobility 2200 cm 2 /V.s, with sheet carrier concentration 8.7e10 12 cm -2 and sheet resistance 326 Ohm/sq, is obtained for AlGaN grown in N2 ambient and with high V/III ratios.
متن کاملCharacterization and Analysis of Surface Passivations and Gate Insulators for AlGaN/GaN Microwave HFETs
The large bandgap of gallium nitride (GaN) and aluminum gallium nitride (AlGaN) offers an inherently high intrinsic breakdown field. When the materials are joined into the AlGaN/GaN heterostructure a 2-dimensional electron gas (2DEG) with a high electron density as well as high electron mobility is generated. The combination of high electron density with high mobility and high breakdown field r...
متن کامل